PART |
Description |
Maker |
UPD72042A UPD72042AGT UPD72042B UPD72042BGT |
LSI DEVICES FOR Inter Equipment BusTM (IEBusTM) PROTOCOL CONTROL
|
NEC[NEC]
|
UPD72042BGT UPD72042B |
IEBus(Inter Equipment Bus) protocol control IC LSI DEVICE FOR Inter Equipment Bus (IEBus) PROTOCOL CONTROL
|
NEC[NEC]
|
M52768FP |
PLL-INTER VIF/SIF
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
LC8954 |
CMOS LSI Error Correction and ADPCM Playback LSI for CD-1 Applications
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
MDR706F |
1.9GHz PHS Inter stage BPF
|
List of Unclassifed Manufacturers
|
LC74751 2086 |
On-Screen Display LSI From old datasheet system CMOS LSI
|
SANYO[Sanyo Semicon Device]
|
LC895195 |
CMOS LSI ATA-PI (IDE) CD-ROM Decoder LSI
|
SANYO[Sanyo Semicon Device]
|
AS1115-BQFT AS1115-BSST AS111512 |
64 LEDs, IC Inter faced LED Dr iver wi th Keyscan
|
austriamicrosystems AG
|
BGF104C |
HSMMC Inter face Fi l ter and ESD Protect ion
|
Infineon Technologies AG
|
EPC1064V EPC1213 EPC1441 |
Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices
|
Altera Corporation
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|